The need for smaller and faster devices pushed the material science up to the limit. It is already known that scaling of Silicon devices (gate electronics, memories) is limited by material and interface properties of the thin SiO2 gate dielectric. With the (re)discovery of the nitrides and oxides, including cuprates and manganites, there are new possibilities to achieve junctions with properties that can fulfill the future requirements for a wide range of applications. Key ingredient for a succesful application of these complex materials in multi-layer techniques is the controlled reproducible growth of these materials on top of each other. This requires a detailed understanding of their growth characteristics and mutual chemical and structural compatibility. For the development of novel nanometer scale devices based on interface properties (Spin-valve transistors, Mott transistors, Josephson junctions, 3-terminal devices, Gate electronics) the control on atomic level becomes of the utmost importance.
Several groups within MESA+ are working in this field. Their motivation is the different research programs is linked to a variety of applications. Examples are microelectronics, superconductivity, magnetism, and chemistry. The aim of this orientation is to combine the knowledge in different research groups and study the interface properties of complex materials related to their individual research programs. The increased co-operation and focus in research is expected to be very beneficial for MESA+ and the research groups. Combining the research activities of these groups in an orientation is essential to be succesful on a world level. |
